首頁(yè) >TNETV2520FIDZVC>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
P-ChannelEnhancementModeVerticalDMOSFETs | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | SUTEX | ||
HighlySensitiveAmbientLightSensor Features ?Configurable,highsensitivity ?Programmablegainandintegrationtime ?4096xdynamicrangebygainadjustmentonly ?1mluxdetectableilluminance ?TailoredALSresponse ?UV/IRblockingfilterforClearchannel ?ALSinterruptwiththresholds ?Flicker-immuneALSsensingwit | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
GlassSMD3.2x2.530MHzCrystalUnit Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
SUPERFASTRECOVERYRECTIFIER | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2520isN-channelMOSFieldEffectTransistor designedforDC/DCconverterandpowermanagement applicationsofportableequipments. FEATURES ?Lowon-stateresistance RDS(on)1=13.2mΩMAX.(VGS=10V,ID=10A) RDS(on)2=17mΩMAX.(VGS=4.5V,ID=5.0A) ?Buil | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
UltraLowphasenoiseVCOwithbuilt-inbufferamplifier | BOWEIBOWEI Integrated Circuits CO.,LTD. 博威集成電路河北博威集成電路有限公司 | BOWEI | ||
UltraLowphasenoiseVCOwithbuilt-inbufferamplifier | BOWEIBOWEI Integrated Circuits CO.,LTD. 博威集成電路河北博威集成電路有限公司 | BOWEI | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM |
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