TRS6A65F

Marking：TRS6A65F；Package：TO-220F-2L；SiC Schottky Barrier Diode

TRS6A65F,S1Q

Package：TO-220-2 整包；包裝：管件 類別：分立半導體產品 二極管 - 整流器 - 單 描述：PB-F DIODE TO-220-2L V=650 IF=6A

Toshiba Semiconductor and Storage

ITK6A65W

iscN-ChannelMOSFETTransistor

K6A65D

SwitchingRegulatorApplications

SwitchingRegulatorApplications ?Lowdrain-sourceONresistance:RDS(ON)=0.95Ω(typ.) ?Highforwardtransferadmittance:?Yfs?=4.0S(typ.) ?Lowleakagecurrent:IDSS=10μA(max)(VDS=650V) ?Enhancement-mode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TK6A65D

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK6A65D

SwitchingRegulatorApplications

SwitchingRegulatorApplications ?Lowdrain-sourceONresistance:RDS(ON)=0.95Ω(typ.) ?Highforwardtransferadmittance:?Yfs?=4.0S(typ.) ?Lowleakagecurrent:IDSS=10μA(max)(VDS=650V) ?Enhancement-mode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TK6A65D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.11Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

TK6A65W

MOSFETsSiliconN-ChannelMOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.85Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=0.18mA)

TK6A65W

iscN-ChannelMOSFETTransistor

TRS6A65C

SiCSchottkyBarrierDiode