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TSM1N60CH中文資料臺灣半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

TSM1N60CH
廠商型號

TSM1N60CH

功能描述

N-Channel Power Enhancement Mode MOSFET

文件大小

174.02 Kbytes

頁面數(shù)量

4

生產(chǎn)廠商 Taiwan Semiconductor Company, Ltd
企業(yè)簡稱

TSC臺灣半導(dǎo)體

中文名稱

臺灣半導(dǎo)體股份有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-7-30 23:00:00

人工找貨

TSM1N60CH價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

TSM1N60CH規(guī)格書詳情

VDS= 600V

ID= 1A

RDS (on), Vgs @ 10V, Ids @ 0.6A = 8?

General Description

The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

Features

Robust high voltage termination

Avalanche energy specified

Diode is characterized for use in bridge circuits

Source to Drain diode recovery time comparable to a discrete fast recovery diode.

IDSSand VDS(on)specified at elevated temperature

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
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