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TW015N65CS1F中文資料東芝數據手冊PDF規(guī)格書
TW015N65CS1F規(guī)格書詳情
Features
(1) Chip design of 3rd generation (Built-in SiC schottky barrier diode)
(2) Low diode forward voltage: VDSF = -1.35 V (typ.)
(3) High voltage: VDSS = 650 V
(4) Low drain-source on-resistance: RDS(ON) = 15 m
? (typ.)
(5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, I
D = 11.7
mA)
(6) Enhancement mode.
Applications
? Switching Voltage Regulators
