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UPA801T

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

TheμPA801Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA801T

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA801T

NPN SILICON HIGH FREQUENCY

CEL

California Eastern Labs

UPA801T

isc Silicon NPN RF Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

UPA801T

NONLINEAR MODEL

CEL

California Eastern Labs

UPA801TC

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA801TC-T1

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA801TF

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION TheUPA801TFcontainstwoNE856NPNhighfrequencysiliconbipolarchips.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicatonswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilyconfiguredfortw

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA801T-T1

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

TheμPA801Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA801T_09

NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號(hào)：

    UPA801T

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    NPN SILICON HIGH FREQUENCY TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
24+
SOT-363/SOT-323-6
8600
新進(jìn)庫(kù)存/原裝
 詢價(jià)
NEC
17+
SOT-363
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
NEC
16+
SOT-363
10000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
 詢價(jià)
NEC
24+
SOT-363
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
NEC
23+
SOT-363
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
NEC
25+23+
SOT-363
43427
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價(jià)
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
NEC
2022
SOT-363 / SOT-323-6
8600
全新原裝現(xiàn)貨熱賣
 詢價(jià)
NEC
24+
NA/
52250
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價(jià)
NEC
22+
SOT-363
25000
只有原裝原裝,支持BOM配單
 詢價(jià)
更多UPA801T供應(yīng)商 更新時(shí)間2025-6-23 16:00:00

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