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IXFH120N25T

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier

IXYS

IXYS Corporation

IXFK120N25

HiPerFETPowerMOSFETs

SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applications ?DC-DCcon

IXYS

IXYS Corporation

IXFK120N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK120N25P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=24mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK120N25P

PolarPowerMOSFETHiPerFET

N-ChannelEnhancementModeAvalancheRatedFastIntrisicDiode Features ?InternationalStandardPackages ?FastIntrinsicDiode ?AvalancheRated ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?Switched-ModeandResonant-ModePowe

IXYS

IXYS Corporation

IXFQ120N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFT120N25T

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier

IXYS

IXYS Corporation

IXFX120N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX120N25

HiPerFETPowerMOSFETs

SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applications ?DC-DCcon

IXYS

IXYS Corporation

IXFX120N25P

PolarPowerMOSFETHiPerFET

N-ChannelEnhancementModeAvalancheRatedFastIntrisicDiode Features ?InternationalStandardPackages ?FastIntrinsicDiode ?AvalancheRated ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?Switched-ModeandResonant-ModePowe

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    UPD120N25TA-A

  • 制造商：

    Renesas Electronics Corporation

供應商型號品牌批號封裝庫存備注價格
NEC
21+
SOT23-5
6000
絕對原裝現(xiàn)貨
 詢價
NEC
23+
SOT23-5
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
23+
NA/
5166
原廠直銷,現(xiàn)貨供應,賬期支持!
 詢價
RENESAS
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
NEC
23+
SOT-89
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
22+
SOT-89
50000
只做原裝假一罰十,歡迎咨詢
 詢價
NEC
6
SOT-89
900
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
NEC
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
 詢價
NEC
2023+
SOT-89
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
 詢價
NEC
23+
SOT-89
10000
原裝正品現(xiàn)貨
 詢價
更多UPD120N25TA-A供應商 更新時間2025-2-26 9:16:00

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