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UPD5702

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Labs

CEL

UPD5702

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

CEL

California Eastern Labs

CEL

UPD5702TU

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Labs

CEL

UPD5702TU

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

FEATURES ?OutputPower:Pout=+21dBmMIN.@Pin=?5dBm,f=1.9GHz,VDS=3.0V :Pout=+21dBmMIN.@Pin=+2dBm,f=2.45GHz,VDS=3.0V ?SingleSupplyvoltage:VDS=3.0VTYP. ?Packagedin8-pinLead-LessMinimold(2.0x2.2x0.5mm)suitableforhigh-densitysurfacemounting.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RENESAS

UPD5702TU-A

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Labs

CEL

UPD5702TU-A

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT\nFOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONSDESCRIPTION\nThe μPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. T; ? Output Power : Pout = +21 dBm MIN. @Pin = ?5 dBm, f = 1.9 GHz, VDS = 3.0 V\n: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V\n? Single Supply voltage : VDS = 3.0 V TYP.\n? Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.;

CEL

California Eastern Labs

CEL

UPD5702TU-E2

絲?。?a target="_blank" title="Marking" href="/5702/marking.html">5702；Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

FEATURES ?OutputPower:Pout=+21dBmMIN.@Pin=?5dBm,f=1.9GHz,VDS=3.0V :Pout=+21dBmMIN.@Pin=+2dBm,f=2.45GHz,VDS=3.0V ?SingleSupplyvoltage:VDS=3.0VTYP. ?Packagedin8-pinLead-LessMinimold(2.0x2.2x0.5mm)suitableforhigh-densitysurfacemounting.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RENESAS

UPD5702TU-E2-A

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Labs

CEL

UPD5702TU-E2-A

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Labs

CEL

UPD5702TU-E2-A

Package：8-SMD，扁平引線裸焊盤；包裝：散裝 類別：RF/IF，射頻/中頻和 RFID 射頻放大器 描述：IC AMP 802.15.1 2.4GHZ 8MINIMOLD

CEL

California Eastern Labs

CEL

詳細參數(shù)

  • 型號：

    UPD5702

  • 制造商：

    CEL

  • 制造商全稱：

    CEL

  • 功能描述：

    NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

供應(yīng)商型號品牌批號封裝庫存備注價格
CEL
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
NEC
24+
SOP-8
118901
新進庫存/原裝
 詢價
NEC
18+
SOT-8
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
NEC
20+
SOP-8
2960
誠信交易大量庫存現(xiàn)貨
 詢價
CEL
20+
8-SMD
5000
無線通信IC,大量現(xiàn)貨!
 詢價
CEL
20+
射頻元件
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
CEL
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
NEC
2022
SOP-8
118901
全新原裝現(xiàn)貨熱賣
 詢價
NEC
23+
SOT-8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CEL
22+
8MINIMOLD
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多UPD5702供應(yīng)商 更新時間2025-8-3 8:01:00

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