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BLA1011-2

AvionicsLDMOStransistor

DESCRIPTION SiliconN-channelenhancementmodelateralD-MOStransistorencapsulatedina2-leadflangelesspackage(SOT538A)withaceramiccap.Thecommonsourceisconnectedtothemountingbase. FEATURES ?Highpowergain ?Easypowercontrol ?Excellentruggedness ?Sourceonmountingb

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLA1011-2

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

EIA1011-2P

10.7-11.7GHz,2WInternallyMatchedPowerFET

10.7-11.7GHz,2WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(46dBmTYPICAL) ?+33.5/+33.0dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9.5/8.5dBTYPICALG1dBPOWERGAINFOREIA/EI

Excelics

Excelics Semiconductor, Inc.

EIB1011-2P

10.7-11.7GHz,2WInternallyMatchedPowerFET

10.7-11.7GHz,2WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(46dBmTYPICAL) ?+33.5/+33.0dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9.5/8.5dBTYPICALG1dBPOWERGAINFOREIA/EI

Excelics

Excelics Semiconductor, Inc.

NEZ1011-2E

GaAsMESFET

2WX-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNEZ1011-2EispowerGaAsFETwhichprovides highgain,highefficiencyandhighoutputpowerinXband. Theinternalinputandoutputmatchingenables guaranteedperformancetobeachievedwithonlya50W externalcircuit.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NEZ1011-2E

2WX,Ku-BANDPOWERGaAsMESFET

DESCRIPTION TheNEZ1011-2EandNEZ1414-2EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50?externalcircuit.Toreducethermalresistancethedevic

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

TIM1011-2L

MICROWAVEPOWERGaAsFET

FEATURES ■HIGHPOWER P1dB=33.5dBmat10.7GHzto11.7GHz ■HIGHGAIN G1dB=7.5dBat10.7GHzto11.7GHz ■BROADBANDINTERNALLYMATCHED ■HERMETICALLYSEALEDPACKAGE

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

供應(yīng)商型號品牌批號封裝庫存備注價格
SMSC
2023+
QFN
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
SMSC
24+
QFN
35200
一級代理/放心采購
 詢價
SMSC
1948+
QFN
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
微芯
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
US
20+
傳感器
8796
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
SMSC
23+
TQFP
1026
全新原裝
 詢價
SMSC
24+
TQFP128
69
詢價
SMSC
2020+
QFP
200
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
SMSC
05+
TQFP/128
69
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價
SMSC
20+
QFP
500
樣品可出,優(yōu)勢庫存歡迎實(shí)單
 詢價
更多USX1011-2供應(yīng)商 更新時間2025-2-8 8:00:00

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