VB1106K

N-Channel 100-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC

VB1106K

N-Channel 100-V (D-S) MOSFET

VB1106K_V01

N-Channel 100-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC

VBA1106N

N-Channel100-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Available ?TrenchFET?PowerMOSFET ?100UISTested APPLICATIONS ?HighFrequencyBoostConverter ?LEDBacklightforLCDTV

VBE1106N

N-Channel100V(D-S)MOSFET

VBE1106N

N-Channel100V(D-S)MOSFET

FEATURES ?TrenchFET?powerMOSFET ?100UIStested APPLICATIONS ?Primarysideswitch

VBM1106S

N-Channel100-V(D-S)SuperTrenchPowerMOSFET

APPLICATIONS ?IsolatedDC/DCConverters FEATURES ?SuperTrenchtechnologyPowerMOSFET ?ExcellentgatechargexRds(on)product(FOM) ?Verylowon-resfistanceRds(on) ?100RgandUISTested

VEC1106

PNPEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

PNPEpitaxialPlanarSiliconTransistor Features ?AdoptionofMBITprocess. ?Highcurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?Highspeedswitching. ?Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim(0.75mm). ?Highallowablepowerdissi

VN1106ND

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs???

VP1106ND

P-ChannelEnhancement-ModeVerticalDMOSPowerFETs?