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VIT3080C

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freea

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3080C

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3080C-E3

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3080CHM3-4W

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freea

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3080C-M3-4W

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freea

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3080C-E3

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3080C-E3

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3080C-E3/4W

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3080C-E3/4W

包裝：管件 封裝/外殼：TO-262-3，長(zhǎng)引線(xiàn)，I2Pak，TO-262AA 類(lèi)別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 30A 80V TO-262AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VIT3080CHM3/4W

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-262-3，長(zhǎng)引線(xiàn)，I2Pak，TO-262AA 類(lèi)別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 30A 80V TO-262AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VIT3080C-M3/4W

包裝：卷帶（TR） 封裝/外殼：TO-262-3，長(zhǎng)引線(xiàn)，I2Pak，TO-262AA 類(lèi)別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 30A 80V TO-262AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

詳細(xì)參數(shù)

  • 型號(hào)：

    VIT3080C

  • 制造商：

    VISHAY

  • 制造商全稱(chēng)：

    Vishay Siliconix

  • 功能描述：

    Dual Trench MOS Barrier Schottky Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY
1809+
TO-262
3675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢(xún)價(jià)
Vishay Semiconductor Diodes Di
22+
TO262AA
9000
原廠(chǎng)渠道,現(xiàn)貨配單
 詢(xún)價(jià)
VISHAY/威世
23+
TO-262AA
11200
原廠(chǎng)授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
 詢(xún)價(jià)
Vishay Semiconductor Diodes Di
23+
TO262AA
9000
原裝正品，支持實(shí)單
 詢(xún)價(jià)
Vishay General Semiconductor -
24+
TO-262-3 長(zhǎng)引線(xiàn) I?Pak TO-26
9350
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢(xún)價(jià)
更多VIT3080C供應(yīng)商 更新時(shí)間2021-9-14 10:50:00

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