VS-C10ET07T-M3_V01中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

Majority carrier diode using Schottky technology

on SiC wide band gap material

Positive VF temperature coefficient for easy

paralleling

Virtually no recovery tail and no switching losses

Temperature invariant switching behavior

175 °C maximum operating junction temperature

MPS structure for high ruggedness to forward current

surge events

Meets JESD 201 class 1A whisker test

Solder bath temperature 275 °C maximum, 10 s per

JESD 22-B106

Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION / APPLICATIONS

Wide band gap SiC based 650 V Schottky diode, designed

for high performance and ruggedness.

Optimum choice for high speed hard switching and efficient

operation over a wide temperature range, it is also

recommended for all applications suffering from Silicon

ultrafast recovery behavior.

Typical applications include AC/DC PFC and DC/DC ultra

high frequency output rectification in FBPS and LLC

converters.

MECHANICAL DATA

Case: 2L TO-220AC

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Mounting torque: 10 in-lbs maximum