首頁 >VSO010N06MS>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·AutomaticTestEquipment ·High-SideSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOSTMPower-Transistor,60V | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NewOptiMOS??40Vand60V | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
60N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
MOSFET-Power,SingleN-Channel60V,9.8m,51A Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel60V,9.8m,51A Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
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