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CEB11N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED11N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF11N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP11N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU11N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FCPF11N65

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCPF11N65-G

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

GC11N65F

N-ChannelEnhancementModePowerMOSFET

Description TheGC11N65Fusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導體

GC11N65K

N-ChannelEnhancementModePowerMOSFET

Description TheGC11N65Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導體

GC11N65M

N-ChannelEnhancementModePowerMOSFET

Description TheGC11N65Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導體

供應商型號品牌批號封裝庫存備注價格
上海維安
兩年內(nèi)
NA
24970
實單價格可談
 詢價
2505
原裝現(xiàn)貨
 詢價
WAYON/維安
23+
NA
6800
原裝正品,力挺實單
 詢價
維安
23+
TO-252
11200
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
WAYON/維安
22+
TO-252
9000
原裝正品,支持實單!
 詢價
WAYON/維安
23+
TO-252
10000
正規(guī)渠道,只有原裝!
 詢價
WAYON維安
22+
TO-252
10000
原裝正品,渠道現(xiàn)貨
 詢價
WAYON維安
24+
TO-252
10000
一級代理保證進口原裝正品現(xiàn)貨假一罰十價格合理
 詢價
WAYON/維安
24+
TO-252
5000
十年沉淀唯有原裝
 詢價
WAYON/維安
23+
TO-252
20000
詢價
更多WMO11N65FD供應商 更新時間2025-3-16 8:00:00

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