WMS30N050S中文資料瑞能半導體數(shù)據(jù)手冊PDF規(guī)格書

General description

WMS30N050S is a high performance

logic level N-channel MOSFET in TO252

package, which utilizes advanced Trench

MOSFET technology to provide low RDS(on)

and gate charge. It is designed and qualified

in a wide range of industrial and consumer

applications.

Features and benefits

? Advance High Cell Density Trench Technology

? Low RDS(on) to Minimize Conduction Losses

? Low Capacitance to Minimize Switching Losses

? Optimized Gate Charge to Minimize Driver Losses

? 100% UIS Tested

? RoHS Compliant and Halogen Free

Applications

? DC?DC Converters

? BLDC Motor Control

? Load Switch

? Lithium-ion Battery Protection