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WS1A3940

GaN on SiC Power Amplifier Module for 5G

Description TheWS1A3940isanAsymmetricDohertyPowerAmplifierModule(PAM)integratingWolfspeedGaNonSiCHEMTtransistorswithRF matchingandbiasingnetworksonamultilayerlaminatesubstratewithadvancedheatsinkingtechnology.TheWS1A3940hasbeen designedtooperatefrom3700MH

WOLFSPEED

WOLFSPEED, INC.

WS1A3940-V1-R3K

39.5 dBm GaN-on-SiC Power Amplifier Module; 3700-3980 MHz; ·Gate bias supplies for main and peaking sub-amplifiers from either side of the device\n·Integrated harmonic terminations\n·GaN-on-SiC technology\n·Pb-free and RoHS compliant\n·Recommended driver is the WSGPA01\n;

The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN-on-SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3700 MHz to 3980 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.\n\n

MACOMTyco Electronics

瑪科姆技術(shù)方案控股有限公司

WS1A3940V2-04

GaN on SiC Power Amplifier Module for 5G

Description TheWS1A3940isanAsymmetricDohertyPowerAmplifierModule(PAM)integratingWolfspeedGaNonSiCHEMTtransistorswithRF matchingandbiasingnetworksonamultilayerlaminatesubstratewithadvancedheatsinkingtechnology.TheWS1A3940hasbeen designedtooperatefrom3700MH

WOLFSPEED

WOLFSPEED, INC.

WS1A3940-V2-R00A

GaN on SiC Power Amplifier Module for 5G

Description TheWS1A3940isanAsymmetricDohertyPowerAmplifierModule(PAM)integratingWolfspeedGaNonSiCHEMTtransistorswithRF matchingandbiasingnetworksonamultilayerlaminatesubstratewithadvancedheatsinkingtechnology.TheWS1A3940hasbeen designedtooperatefrom3700MH

WOLFSPEED

WOLFSPEED, INC.

WS1A3940-V2-R1

GaN on SiC Power Amplifier Module for 5G

Description TheWS1A3940isanAsymmetricDohertyPowerAmplifierModule(PAM)integratingWolfspeedGaNonSiCHEMTtransistorswithRF matchingandbiasingnetworksonamultilayerlaminatesubstratewithadvancedheatsinkingtechnology.TheWS1A3940hasbeen designedtooperatefrom3700MH

WOLFSPEED

WOLFSPEED, INC.

WS1A3940-V2-R3K

GaN on SiC Power Amplifier Module for 5G

Description TheWS1A3940isanAsymmetricDohertyPowerAmplifierModule(PAM)integratingWolfspeedGaNonSiCHEMTtransistorswithRF matchingandbiasingnetworksonamultilayerlaminatesubstratewithadvancedheatsinkingtechnology.TheWS1A3940hasbeen designedtooperatefrom3700MH

WOLFSPEED

WOLFSPEED, INC.

技術(shù)參數(shù)

  • Min Frequency (MHz)：

    3700

  • Max Frequency(MHz)：

    3980

  • P3dB Output Power(W)：

    60

  • Gain(dB)：

    13.0

  • Efficiency(%)：

    52

  • Operating Voltage(V)：

    48

  • Package Category：

    Surface Mount

  • Form：

    Packaged Discrete Transistor

  • Technology：

    GaN-on-SiC

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BOURNS/伯恩斯
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