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CA3060

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

Intersil

Intersil Corporation

CA3060

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

HARRIS

Harris Corporation

CA3060E

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

Intersil

Intersil Corporation

CA3060E

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

HARRIS

Harris Corporation

CBD3060LCT

LOWVFSCHOTTKYRECTIFIER

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

CBRX3060CT

TrenchSchottkyBarrierRectifier

Good-Ark

GOOD-ARK Electronics

CC3060C-AZ

3-phase3-line500VACAvailable5-150AForoutputlineonly

SOSHINSoshin electric Co., Ltd.

雙信電機(jī)雙信電機(jī)株式會(huì)社

CEB3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,105A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

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50000
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N/A
79000
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DFN3X3-8
188600
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23+
DFN3X3-8
5000
交期準(zhǔn)時(shí)服務(wù)周到
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24+
DFN3*3-8
60000
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WINSOK微碩
2447
DFN 3.3x3.3-8
105000
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50000
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22820
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更多WSD3060DN供應(yīng)商 更新時(shí)間2025-5-11 15:16:00

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