首頁 >WSF60P03-VB>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-60A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-60A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModePowerMOSFET | HUILIDAShenzhen hui lida electronic co., LTD 匯利達廣東匯利達半導體有限公司 | HUILIDA | ||
P-ChannelEnhancementModePowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
-30VP-ChannelEnhancementModeMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
NCEP-ChannelEnhancementModePowerMOSFET Description TheNCE60P03Rusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforuseasaloadswitchorinPWMapplications.Application ●Loadswitch ●PWMapplication GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
NCEP-ChannelEnhancementModePowerMOSFET Description TheNCE60P03Yusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs Features ?60A,30V ?rDS(ON)=0.027? ?TemperatureCompensatingPSPICE?Model ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards” | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
60A,30V,0.027Ohm,P-ChannelPowerMOSFETs TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg | Intersil Intersil Corporation | Intersil | ||
60A,30V,0.027Ohm,P-ChannelPowerMOSFETs TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg | Intersil Intersil Corporation | Intersil |
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