ZUMT718

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES *500mWPOWERDISSIPATION *ICCONT1A *3APeakPulseCurrent *ExcellentHFECharacteristicsUpTo3A(pulsed) *ExtremelyLowSaturationVoltage *ExtremelyLowEquivalentOnResistance;RCE(sat) APPLICATIONS *SwitchfunctionsinLEDdisplaysandSatellitereceivers *Negativ

ZUMT718

Super323
SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR

Features ?BVCEO>-20V ?IC=-1AContinuousCollectorCurrent ?ICM=-3APeakPulseCurrent ?LowSaturationVoltage-250mVMax@IC=-1A. ?RCE(SAT)=200m?@1AforaLowEquivalentOn-Resistance ?500mWPowerDissipation ?ExcellenthFECharacteristicsupto3A ?ComplementaryNPNT

ZUMT718

Super323
SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR 3A Peak Pulse Current

Features ?BVCEO>-20V ?IC=-1AContinuousCollectorCurrent ?ICM=-3APeakPulseCurrent ?LowSaturationVoltage-250mVMax@IC=-1A. ?RCE(SAT)=200m?@1AforaLowEquivalentOn-Resistance ?500mWPowerDissipation ?ExcellenthFECharacteristicsupto3A ?ComplementaryNPNT

ZUMT718TA

Super323
SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR 3A Peak Pulse Current

Features ?BVCEO>-20V ?IC=-1AContinuousCollectorCurrent ?ICM=-3APeakPulseCurrent ?LowSaturationVoltage-250mVMax@IC=-1A. ?RCE(SAT)=200m?@1AforaLowEquivalentOn-Resistance ?500mWPowerDissipation ?ExcellenthFECharacteristicsupto3A ?ComplementaryNPNT

ZUMT718_15

20V PNP POWER SWITCHING TRANSISTOR IN SOT323

ZUMT718TA

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：SC-70，SOT-323 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 20V 1A SOT323

ZUMT718TC

包裝：卷帶（TR） 封裝/外殼：SC-70，SOT-323 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 20V 1A SOT323

ZXTD718MC

DUAL20VPNPLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits ?BVCEO>-20V; ?IC=-3.5AContinuousCollectorCurrent ?RSAT=64m?forLowEquivalentOnResistance ?LowSaturationVoltage(-220mV@-1A) ?hFEcharacterizedupto-6Aforhighcurrentgainholdsup ?DualNPNsavingfootprintandcomponentcount ?Lowprofile

ZXTD718MCTA

DUAL20VPNPLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits ?BVCEO>-20V; ?IC=-3.5AContinuousCollectorCurrent ?RSAT=64m?forLowEquivalentOnResistance ?LowSaturationVoltage(-220mV@-1A) ?hFEcharacterizedupto-6Aforhighcurrentgainholdsup ?DualNPNsavingfootprintandcomponentcount ?Lowprofile

ZXTP718MA

20VPNPLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits ?BVCEO>-20V ?IC=-3.5AContinuousCollectorCurrent ?LowSaturationVoltage(-220mVmax@-1A) ?RSAT=64m?foralowequivalentOn-Resistance ?hFEspecifiedupto-6Aforhighcurrentgainholdup ?Lowprofile0.6mmhighpackageforthinapplications ?RθJA

ZXTP718MATA

20VPNPLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits ?BVCEO>-20V ?IC=-3.5AContinuousCollectorCurrent ?LowSaturationVoltage(-220mVmax@-1A) ?RSAT=64m?foralowequivalentOn-Resistance ?hFEspecifiedupto-6Aforhighcurrentgainholdup ?Lowprofile0.6mmhighpackageforthinapplications ?RθJA

ZXTP718MATC

20VPNPLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits ?BVCEO>-20V ?IC=-3.5AContinuousCollectorCurrent ?LowSaturationVoltage(-220mVmax@-1A) ?RSAT=64m?foralowequivalentOn-Resistance ?hFEspecifiedupto-6Aforhighcurrentgainholdup ?Lowprofile0.6mmhighpackageforthinapplications ?RθJA

ZXTPS718MC

20VPNPLOWSATURATIONTRANSISTORAND

FeaturesandBenefits PNPTransistor ?BVCEO>-20V ?IC=-3.5AContinuousCollectorCurrent ?LowSaturationVoltage(-220mVmax@-1A) ?RSAT=64m?foralowequivalentOn-Resistance ?hFEcharacterizedupto-6Aforhighcurrentgainholdup SchottkyDiode ?BVR>40

ZXTPS718MCTA

20VPNPLOWSATURATIONTRANSISTORAND

FeaturesandBenefits PNPTransistor ?BVCEO>-20V ?IC=-3.5AContinuousCollectorCurrent ?LowSaturationVoltage(-220mVmax@-1A) ?RSAT=64m?foralowequivalentOn-Resistance ?hFEcharacterizedupto-6Aforhighcurrentgainholdup SchottkyDiode ?BVR>40