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NVTYS014P04M8LTWG

Marking：014P；Package：LFPAK33；MOSFET – Power, Single P-Channel ?40 V, 13.5 m, ?53 A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFR?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導體安森美半導體公司

TLE5014P16

Marking：014P；Package：PG-TDSO-16；Giant Magneto Resistance (GMR)-based principle

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

NVMFS014P04M8LT1G

Marking：014P04；Package：DFN5；MOSFET ??Power, Single P-Channel-40 V, 13.8 m, -52.1 A

Features ?SmallFootprintforCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?NVMFWS014P04M8L?WettableFlanksProduct ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFR?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVMFWS014P04M8LT1G

Marking：014P4W；Package：DFN5；MOSFET ??Power, Single P-Channel-40 V, 13.8 m, -52.1 A

Features ?SmallFootprintforCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?NVMFWS014P04M8L?WettableFlanksProduct ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFR?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導體安森美半導體公司

TLE5014P16D

Marking：014PD；Package：PG-TDSO-16；Giant Magneto Resistance (GMR)-based principle

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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