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3.0SMC13

Marking：13；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

7UL1T02FS

Marking：13；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription ?2-InputNORGatewithLevelShifting Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Operatingsupplyvoltagerange:VCC=2.3Vto3.6V (3)Thehigh-levelinputvoltageisuptranslationtothepowersupplyvoltage. (4)Thehigh-levelinput

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

7UL1T02FU

Marking：13；Package：SOT-353；2-Input NOR Gate with Level Shifting

Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Operatingsupplyvoltagerange:VCC=2.3Vto3.6V (3)Thehigh-levelinputvoltageisuptranslationtothepowersupplyvoltage. (4)Thehigh-levelinputvoltageisdowntranslationtothepowersupplyvoltage. (5)3.6V

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

7UL1T02LF

Marking：13；Package：SOT-353；2-Input NOR Gate with Level Shifting

Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Operatingsupplyvoltagerange:VCC=2.3Vto3.6V (3)Thehigh-levelinputvoltageisuptranslationtothepowersupplyvoltage. (4)Thehigh-levelinputvoltageisdowntranslationtothepowersupplyvoltage. (5)3.6V

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

BC847BPN

Marking：13；Package：TSSOP6；45 V, 100 mA NPN/PNP general-purpose transistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC847BPN-Q

Marking：13；Package：TSSOP6；45 V, 100 mA NPN/PNP general-purpose transistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotive

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC847BVN

Marking：13；Package：SOT666；45 V, 100 mA NPN/PNP general purpose transistor

Featuresandbenefits ?300mWtotalpowerdissipation ?Verysmall1.6mmx1.2mmultrathinpackage ?ReplacestwoSC-75/SC-89packagedtransistorsonsamePCBarea ?ReducedrequiredPCBarea ?Reducedpickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BSS84

Marking：13；Package：SOT23；P-channel enhancement mode vertical DMOS transistor

1.1Generaldescription P-channelenhancementmodeverticalDiffusionMetal-OxideSemiconductor(DMOS) transistorinasmallSurface-MountedDevice(SMD)plasticpackage. [1]/DG:halogen-free 1.2Features 1.3Applications Table1.Productoverview Typenumber[1]Package NXPJEDEC BSS84S

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

CMZ13A

Marking：13；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications ?Surgeabsorber Features (1)Powerdissipation:PD=2W (2)Zenervoltage:Vz=12to51V (3)Theuseofsmall,thinsurface-mountpackageisoptimumwayforhigh-densitymounting. Nickname:M-FLATTM

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

D34V0H1U2LP-7B

Marking：13；Package：X1-DFN1006-2；34V UNI-DIRECTIONAL TVS DIODE

Features ?LowProfilePackage(0.53mmMax)andUltra-SmallPCBFootprint Area(1.08mm*0.68mmMax)SuitableforCompactPortable Electronics ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±20kV,Contact±18kV ?1ChannelofESDProtection ?LowChannelInputCapacitance ?Total

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    13

  • 制造商：

    Visual Communications Company - VCC

  • 類別：

    光電器件 > 燈 - 白熾燈，氖燈

  • 包裝：

    袋

  • 類型：

    白熾

  • 顏色：

    透明

  • 額定電壓：

    3.7V

  • 透鏡樣式：

    圓形，帶圓頂

  • 透鏡尺寸：

    RG-3 1/2

  • 引線樣式：

    微型螺釘

  • 描述：

    LAMP INCAN RG-3.5 MINI SCRW 3.7V

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