首頁 >2N5401-AT/PC>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE) GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES ?HighCollectorBreakdwonVoltage :VCBO=-160V,VCEO=-150V ?LowLeakageCurrent. :ICBO=-50nA(Max.)@VCB=-120V ?LowSaturationVoltage :VCE(sat)=-0.5V(Max.)@IC=-50mA,IB=-5mA ?LowNoise:NF=8dB(Max.) | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
TO-92PACKAGE | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
BipolarPNPDeviceinaHermeticallysealedLCC1 | SEME-LAB Seme LAB | SEME-LAB | ||
DualBipolarPNPDevicesinahermeticallysealed | SEME-LAB Seme LAB | SEME-LAB | ||
AmplifierTransistorsPNPSilicon AmplifierTransistors PNPSilicon Features ?Pb?FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
AmplifierTransistor(PNPSilicon) PNPSilicon | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
Hi-RelPNPbipolartransistor150V,0.5A Description The2N5401HRisasiliconplanarepitaxialPNPtransistoravailableinTO-18andLCC-3packages.ItisspecificallydesignedforaerospaceHi-RelapplicationsandESCCqualifiedaccordingtothe5202-014specification.IncaseofconflictbetweenthisdatasheetandESCCdetailedspeci | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
PNPSiliconTransistor Description ?Generalpurposeamplifier ?Highvoltageapplication Features ?Highcollectorbreakdownvoltage:VCBO=-160V,VCEO=-160V ?Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(MAX.) ?Complementarypairwith2N5551N | AUK AUK corp | AUK | ||
AmplifierTransistorsPNPSilicon AmplifierTransistors PNPSilicon Features ?Pb?FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
AmplifierTransistors AmplifierTransistors PNPSilicon Features ?Pb?FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
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