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2N7002KW

N-ChannelEnhancementModeFieldEffectTransistor

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?PbFree/RoHSCompliant ?ESDHBM=1000VasperJESD22A114andESDCDM=1500VasperJESD22C101

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002KW

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:2Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective20

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

2N7002KW

N-ChannelEnhancementMOSFET

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

2N7002KW

N-ChannelSMDMOSFETESDProtection

Features ?RDS(ON)=3.0Ω,VGS=10V,@60V/0.50A ?RDS(ON)=4.0Ω,VGS=4.5V,@60V/0.20A ?ESDproduction2kV(Humanbodymode) ?Advancedtrenchprocesstechnology. ?Highdensitycelldesignforultralowon-resistance. ?Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdr

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

2N7002KW

N-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7002KWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *LowReverseTransferCapacitance *ESDProtected *FastSwitchingCap

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7002KW

N-ChannelMOSFET

N-ChannelMOSFET FEATURE ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2N7002KW

N-ChannelEnhancementModeFieldEffectTransistor

Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?LowInput/OutputLeakage ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponreques

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002KW

N-ChSmallSignalMOSFETwithESDProtection

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECELECTRONICS

SEC Electronics Inc.

2N7002KW

N-ChannelEnhancementModeMOSFET

Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

2N7002KW

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CJ/長(zhǎng)電
23+
SOT363
50000
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CJ/長(zhǎng)電
24+
NA/
4880
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長(zhǎng)電
20+
SOT363
1630
進(jìn)口原裝現(xiàn)貨,假一賠十
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NK/南科功率
2025+
SOT-323
986966
國(guó)產(chǎn)
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DIODES(美臺(tái))
2447
SOT23
115000
10000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
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DIODES/美臺(tái)
21+
SOT23
10000
原裝,品質(zhì)保證,請(qǐng)來(lái)電咨詢
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DIODES/美臺(tái)
23+
NA
6000
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DIODES/美臺(tái)
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
DIODES/美臺(tái)
24+
SOT23
25000
原裝正品公司現(xiàn)貨,假一賠十!
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DIODES/美臺(tái)
24+
SOT23
6000
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更多2N7002KPW供應(yīng)商 更新時(shí)間2025-5-24 11:00:00

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