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BLV9N60

N-channelEnhancementModePowerMOSFET

ESTEKEstek Electronics Co. Ltd

伊泰克電子北京伊泰克電子有限公司

FB9N60A

PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

FCD9N60N

N-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCD9N60NTM

N-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCD9N60NTM

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCP9N60N

N-ChannelMOSFET600V,9A,0.385廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP9N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCPF9N60NT

N-ChannelSupreMOS?MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCPF9N60NT

N-ChannelMOSFET600V,9A,0.385廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCPF9N60NT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB9N60

PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRFB9N60A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB9N60A

PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRFB9N60A

IRPLLNR5WideRangeInputLinearFluorescentBallast

IRF

International Rectifier

IRFB9N60A

Switchmodepowersupply

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB9N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB9N60APBF

HEXFETPowerMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowersw

IRF

International Rectifier

IRFS9N60A

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.75?(MAX) ?Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS9N60A

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?Uninterruptib

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS9N60A

SMPSMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?HighSpeedPowerSw

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
1948+
TO-252
18562
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
UBIQ
23+
TO220F
15000
全新原裝現(xiàn)貨,價格優(yōu)勢
詢價
UTC/友順
23+
TO-220F
10000
公司只做原裝正品
詢價
FUJ/日本富士
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
UTC/友順
TO-220F
22+
6000
十年配單,只做原裝
詢價
FUJ/日本富士
22+
TO-220F
50000
只做原裝假一罰十,歡迎咨詢
詢價
FUJ/日本富士
23+
NA/
5050
原裝現(xiàn)貨,當天可交貨,原型號開票
詢價
UTC/友順
2022+
TO-220F
30000
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
詢價
IR
23+
SOT-263
8000
只做原裝現(xiàn)貨
詢價
IR
23+
SOT-263
7000
詢價
更多9N60PC供應(yīng)商 更新時間2025-1-9 14:45:00