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AP18N20GS

N-CHANNEL ENHANCEMENT MODE POWER MOSF

▼LowGateCharge ▼SimpleDriveRequirement ▼FastSwitchingCharacteristic ▼RoHSCompliant&Halogen-Free Description AP18N20seriesarefromAdvancedPowerinnovateddesignand siliconprocesstechnologytoachievethelowestpossibleon-resistance andfastswitchingperformance.Itp

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP18N20GS-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP18N20GS-HF

Fast Switching Characteristic

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP18N20GS-HF_14

Simple Drive Requirement

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP18N20GS-HF_16

Fast Switching Characteristic

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

B18N20D

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

B18N20F

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CMT18N20

POWERFIELDEFFECTTRANSISTOR

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

FDD18N20LZ

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

FDD18N20LZ

N-ChannelUniFETTMMOSFET200V,16A,125m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD18N20LZ

N-channelEnhancementModePowerMOSFET

Features ?VDS=200V,ID=24A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDP18N20F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP18N20F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=10V DESCRIPTION ·motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP18N20F

N-ChannelMOSFET200V,18A,0.14廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP18N20F

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDPF18N20FT

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDPF18N20FT

N-ChannelMOSFET200V,18A,0.14廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDPF18N20FT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=18A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FIR18N20PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FKD18N20

N-Ch200VFastSwitchingMOSFETs

Description TheFKD18N20isthehighestperformance trenchN-chMOSFETswithextremehighcell density,whichprovideexcellentRDSONandgate chargeformostofthesynchronousbuck converterapplications. TheFKD18N20meettheRoHSandGreen Productrequirement,100EASguaranteedwith

FETEKFETek Technology Corp.

臺(tái)灣東沅東沅科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    AP18N20GS

  • 制造商：

    A-POWER

  • 制造商全稱：

    Advanced Power Electronics Corp.

  • 功能描述：

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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APEC
16+
你問我
10000
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APEC
13+
NA
37238
原裝分銷
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APEC富鼎
2016+
TO-263
6523
房間原裝進(jìn)口現(xiàn)貨假一賠十
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APEC
2020+
TO-263
2925
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AOS
18+
TO-263
41200
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APEC
19+
TO-263(S)
40000
授權(quán)代理,進(jìn)口現(xiàn)貨
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APEC
2020+
TO-263
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
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APEC
23+
TO263
30000
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APEC/富鼎
23+
TO-263
24190
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APEC/富鼎
2021+
TO-263
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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更多AP18N20GS供應(yīng)商 更新時(shí)間2025-1-9 16:13:00

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