零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
BFG10 | NPN 2 GHz RF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES ?Highpowergain ?Highefficiency ?Smallsizediscretepoweramplifier ?1.9GHzoperatingarea ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Co | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | |
BFG10 | RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | |
BFG10 | NPN 2 GHz RF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES ?Highpowergain ?Highefficiency ?Smallsizediscretepoweramplifier ?1.9GHzoperatingarea ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Co | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | |
BFG10 | NPN 2 GHz RF power transistor | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | |
NPN 2 GHz RF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES ?Highpowergain ?Highefficiency ?Smallsizediscretepoweramplifier ?1.9GHzoperatingarea ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Co | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN 2 GHz RF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES ?Highpowergain ?Highefficiency ?Smallsizediscretepoweramplifier ?1.9GHzoperatingarea ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Co | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
UHF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES ?Highefficiency ?Smallsizediscretepoweramplifier ?900MHzand1.9GHzoperatingareas ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Common | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
UHF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES ?Highefficiency ?Smallsizediscretepoweramplifier ?900MHzand1.9GHzoperatingareas ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Common | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
UHF power transistor FEATURES ?Highefficiency ?Smallsizediscretepoweramplifier ?900MHzand1.9GHzoperating areas ?Goldmetallizationensures excellentreliability. APPLICATIONS ?Commonemitterclass-AB operationinhand-heldradio equipmentupto1.9GHz. DESCRIPTION NPNsiliconplanarepi | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
UHF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES ?Highefficiency ?Smallsizediscretepoweramplifier ?900MHzand1.9GHzoperatingareas ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Common | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
UHF power transistor FEATURES ?Highefficiency ?Smallsizediscretepoweramplifier ?900MHzand1.9GHzoperating areas ?Goldmetallizationensures excellentreliability. APPLICATIONS ?Commonemitterclass-AB operationinhand-heldradio equipmentupto1.9GHz. DESCRIPTION NPNsiliconplanarepi | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
UHF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES ?Highefficiency ?Smallsizediscretepoweramplifier ?900MHzand1.9GHzoperatingareas ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Common | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
NPN 2 GHz RF power transistor | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
UHF power transistor | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司 | JMNIC | ||
UHF power transistor | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司 | JMNIC | ||
NPN 2 GHz RF power transistor | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
NPN 2 GHz RF power transistor | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司 | JMNIC |
詳細參數(shù)
- 型號:
BFG10
- 制造商:
PHILIPS
- 制造商全稱:
NXP Semiconductors
- 功能描述:
NPN 2 GHz RF power transistor
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NXP恩智浦/PHILIPS飛利浦 |
24+ |
SOT-143SOT-23-4 |
18200 |
新進庫存/原裝 |
詢價 | ||
NXP |
16+ |
NA |
8800 |
誠信經(jīng)營 |
詢價 | ||
PHILIPS |
23+ |
SOT-143 |
8650 |
受權代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
SOT-143 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
PHILIPS |
21+ |
SOT-143 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
PHI |
2023+ |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | |||
PHILIPS |
21+ |
SOT-143 |
12000 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
NXP/PHILIPS |
1922+ |
SOT-143 |
35689 |
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨 |
詢價 | ||
PHILIPS/飛利浦 |
23+ |
SOT-143 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
PHILIPS |
24+ |
SOT143-4 |
598000 |
原裝現(xiàn)貨假一賠十 |
詢價 |
相關規(guī)格書
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相關庫存
更多- BFG10/T1
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