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BFG10

NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES ?Highpowergain ?Highefficiency ?Smallsizediscretepoweramplifier ?1.9GHzoperatingarea ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Co

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG10

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG10

NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES ?Highpowergain ?Highefficiency ?Smallsizediscretepoweramplifier ?1.9GHzoperatingarea ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG10

NPN 2 GHz RF power transistor

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG10/X

NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES ?Highpowergain ?Highefficiency ?Smallsizediscretepoweramplifier ?1.9GHzoperatingarea ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG10/X

NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES ?Highpowergain ?Highefficiency ?Smallsizediscretepoweramplifier ?1.9GHzoperatingarea ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Co

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG10/X

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES ?Highefficiency ?Smallsizediscretepoweramplifier ?900MHzand1.9GHzoperatingareas ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Common

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG10/X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG10W

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES ?Highefficiency ?Smallsizediscretepoweramplifier ?900MHzand1.9GHzoperatingareas ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Common

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG10W

UHF power transistor

FEATURES ?Highefficiency ?Smallsizediscretepoweramplifier ?900MHzand1.9GHzoperating areas ?Goldmetallizationensures excellentreliability. APPLICATIONS ?Commonemitterclass-AB operationinhand-heldradio equipmentupto1.9GHz. DESCRIPTION NPNsiliconplanarepi

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG10W/X

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES ?Highefficiency ?Smallsizediscretepoweramplifier ?900MHzand1.9GHzoperatingareas ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Common

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG10W/X

UHF power transistor

FEATURES ?Highefficiency ?Smallsizediscretepoweramplifier ?900MHzand1.9GHzoperating areas ?Goldmetallizationensures excellentreliability. APPLICATIONS ?Commonemitterclass-AB operationinhand-heldradio equipmentupto1.9GHz. DESCRIPTION NPNsiliconplanarepi

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG10W-X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG10X

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES ?Highefficiency ?Smallsizediscretepoweramplifier ?900MHzand1.9GHzoperatingareas ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Common

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG10-X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG10/X

NPN 2 GHz RF power transistor

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG10WX_15

UHF power transistor

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BFG10WX_2015

UHF power transistor

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BFG10X

NPN 2 GHz RF power transistor

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG10X_15

NPN 2 GHz RF power transistor

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

詳細參數(shù)

  • 型號:

    BFG10

  • 制造商:

    PHILIPS

  • 制造商全稱:

    NXP Semiconductors

  • 功能描述:

    NPN 2 GHz RF power transistor

供應商型號品牌批號封裝庫存備注價格
NXP恩智浦/PHILIPS飛利浦
24+
SOT-143SOT-23-4
18200
新進庫存/原裝
詢價
NXP
16+
NA
8800
誠信經(jīng)營
詢價
PHILIPS
23+
SOT-143
8650
受權代理!全新原裝現(xiàn)貨特價熱賣!
詢價
SOT-143
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
PHILIPS
21+
SOT-143
12588
原裝正品,自己庫存 假一罰十
詢價
PHI
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
PHILIPS
21+
SOT-143
12000
原裝現(xiàn)貨假一賠十
詢價
NXP/PHILIPS
1922+
SOT-143
35689
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
詢價
PHILIPS/飛利浦
23+
SOT-143
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
PHILIPS
24+
SOT143-4
598000
原裝現(xiàn)貨假一賠十
詢價
更多BFG10供應商 更新時間2025-1-12 14:30:00