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BK

型號(hào):4.0SMF14A;Package:SOD-123;3.3 To 48V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Glasspassivatedchip 400Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. MeetAEC-Q101requirement

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

BK

型號(hào):6.0SMAJ14CA;Package:DO-214AC;5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glasspassivatedchip 600Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260°C/10satterminals. RoHScompliant Features

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

BK

型號(hào):ACDBUC0340-HF;Package:SOD-523F;SMD Schottky Barrier Diode

Features -Lowforwardvoltage. -Designedformountingonsmallsurface. -Extremelythinpackage. -Majoritycarrierconduction. -AEC-Q101Qualified&PPAP.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

BK

型號(hào):BC56-10PA;Package:HUSON3;80 V, 1 A NPN medium power transistors

Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BK

型號(hào):BC56-10PA;Package:SOT1061;80 V, 1 A NPN medium power transistors

Featuresandbenefits ?HighcollectorcurrentcapabilityICandICM ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability ?AEC-Q101qual

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BK

型號(hào):BC56-10PA-Q;Package:SOT1061;80 V, 1 A NPN medium power transistors

Featuresandbenefits ?HighcollectorcurrentcapabilityICandICM ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability ?Qualifiedacc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BK

型號(hào):BCX56-10;Package:SOT89;80 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT89(SC-62)flatleadSurface-MountedDevice(SMD) plasticpackage 2.Featuresandbenefits ?HighcollectorcurrentcapabilityICandICM ?Threecurrentgainselections ?Highpowerdissipationcapability 3.Applications ?Li

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BK

型號(hào):BCX56-10;Package:SC-62;80 V, 1 A NPN medium power transistors

Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BK

型號(hào):BCX56-10;Package:SOT-89-3L;SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ?PNPComplementstoBCX51,BCX52,BCX53 ?LowVoltage ?HighCurrent APPLICATIONS ?DriverStagesofAudioAmplifiers

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BK

型號(hào):BCX56-10;Package:SOT-89;Plastic-Encapsulate Transistors

FEATURES PNPComplementstoBCX51,BCX52,BCX53 LowVoltage HighCurrent APPLICATIONS DriverStagesofAudioAmplifiers

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

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