BLF6G20-180P分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features

■ Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 32 V and an IDq of 1600 mA:

◆ Average output power = 50 W

◆ Power gain = 17.5 dB (typ)

◆ Efficiency = 27.5

◆ ACPR = ?35 dBc

■ Easy power control

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (1800 MHz to 2000 MHz)

■ Internally matched for ease of use

Applications

■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range.