BR34E02FVT-WTR中文資料羅姆數(shù)據(jù)手冊PDF規(guī)格書

●Description

BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)

●Features

?256×8 bit architecture serial EEPROM

?Wide operating voltage range: 1.7V-3.6V

?Two-wire serial interface

?High reliability connection using Au pads and Au wires

?Self-Timed Erase and Write Cycle

?Page Write Function (16byte)

?Write Protect Mode

Settable Reversible Write Protect Function: 00h-7Fh

Write Protect 1 (Onetime Rom) : 00h-7Fh

Write Protect 2 (Hardwire WP PIN) : 00h-FFh

?Low Power consumption

Write (at 1.7V ) : 0.4mA (typ.)

Read (at 1.7V ) : 0.1mA(typ.)

Standby ( at 1.7V ) : 0.1μA(typ.)

?DATA security

Write protect feature (WP pin) Inhibit to WRITE at low VCC

?Compact package: TSSOP-B8, VSON008X2030

?High reliability fine pattern CMOS technology

?Rewriting possible up to 1,000,000 times

?Data retention: 40 years

?Noise reduction Filtered inputs in SCL / SDA

?Initial data FFh at all addresses