訂購數(shù)量 | 價格 |
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首頁>BSM150GB170DN2_E3166>芯片詳情
BSM150GB170DN2_E3166_INFINEON/英飛凌_IGBT 模塊 N-CH 1.7KV 220A安富世紀(jì)二部
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
BSM150GB170DN2_E3166
- 功能描述:
IGBT 模塊 N-CH 1.7KV 220A
- RoHS:
否
- 制造商:
Infineon Technologies
- 產(chǎn)品:
IGBT Silicon Modules
- 配置:
Dual 集電極—發(fā)射極最大電壓
- VCEO:
600 V
- 集電極—射極飽和電壓:
1.95 V 在25
- C的連續(xù)集電極電流:
230 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
445 W
- 最大工作溫度:
+ 125 C
- 封裝/箱體:
34MM
供應(yīng)商
- 企業(yè):
深圳市安富世紀(jì)電子有限公司
- 商鋪:
- 聯(lián)系人:
趙妍
- 手機(jī):
18100277303
- 詢價:
- 電話:
0755-23991454
- 地址:
深圳市福田區(qū)華強(qiáng)北路1019號華強(qiáng)廣場A棟17E
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