零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
CEB6042 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,118A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | |
CEB6042 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,118A,RDS(ON)=5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,90A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,118A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,118A,RDS(ON)=5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,90A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelMOSFETusesadvancedSGTtechnology Description: ThisN-ChannelMOSFETusesadvancedSGTtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features: 1)VDS=60V,ID=130A,RDS(ON) | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
13-16GHzHighPowerAmplifier Description TheCHA6042isafour-stagepHEMTHPAMMICdesignedforVSATgroundterminalsandotherradioapplications.TheCHA6042provides32dBmnominaloutputpowerat1dBgaincompressionoverthe13-16GHzfrequencyrange,and32dBsmall-signalgain.Thisproductwillbeavailableinchipf | UMS United Monolithic Semiconductors | UMS | ||
60V175?CN-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
60V175?CN-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
CET/華瑞 |
23+ |
TO-263 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
CET/華瑞 |
2022+ |
TO-263 |
50000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
CET/華瑞 |
2022+ |
TO-263 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
CET |
24+ |
TO-263 |
12300 |
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
CET/華瑞 |
23+ |
TO-263 |
360000 |
交期準(zhǔn)時(shí)服務(wù)周到 |
詢價(jià) | ||
CET/華瑞 |
23+ |
TO264 |
6500 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
CET |
2020+ |
TO-263 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
CET |
21+ |
TO-263 |
547 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
C |
23+ |
TO-263S |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
CET |
1932+ |
TO-263 |
512 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) |
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