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KF4N80F

ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=800V,ID

MORNSUNGuangzhou Jinshengyang Technology Co., Ltd

金升陽廣州金升陽科技有限公司

KF4N80F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=800V,ID

KECKEC CORPORATION

KEC株式會社

KF4N80F

PowerMOSFET

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

KSM4N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB4N80

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF4N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTB4N80E

TMOSPOWERFET4.0AMPERES800VOLTS

TMOSE-FETHighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithh

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP4N80

TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM

TMOSE-FET?PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Ina

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP4N80E

N-ChannelEnhancement-ModeSiliconGate

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

MTP4N80E

TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM

TMOSE-FET?PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Ina

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

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鍇威特
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CONVERT
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CONVERT
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100000
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CONVERT/鍇威特
24+
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5000
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鍇威特
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10000
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362412
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HJ
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Convert Semiconductor(鍇威特半
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315000
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更多CS4N80UL供應商 更新時間2025-4-28 8:46:00

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