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FDA50N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDA50N50

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDA50N50

50Ampere,500VoltN-ChannelPlanarProcessPowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

FDA50N50

500VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?48A,500V,RDS(on)=0.105Ω@VGS=10V ?Lowgatecharge(typical105nC) ?LowCrss(typical45pF) ?Fastswitchin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDA50N50

500VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDH50N50

500VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDH50N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDH50N50

50Ampere,500VoltN-ChannelPlanarProcessPowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IXFE50N50

HiPerFETTMPowerMOSFET

HiPerFETPowerMOSFET SingleDieMOSFET Features ?Lowcostdirect-copperbondedaluminiumpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?2500Visolation ?Lowdraintocasecapacitance ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?

IXYS

IXYS Corporation

IXFK50N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK50N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFN50N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFQ50N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=125mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR50N50

HiPerFET-TMPowerMOSFETsISOPLUS247-TM

HiPerFET?PowerMOSFETsISOPLUS247?(ElectricallyIsolatedBackSurface) SingleDieMOSFET Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFX50N50

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFX50N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTE50N50

POWERFIELDEFFECTTRANSISTORN-CHANNELENHANCEMENTMODESILICONGATETMOS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

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ST
23+
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16900
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2023+
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600
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ST
2018
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300
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ST
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Eaton/ControlAutomation
14
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Eaton / Control Automation
2022+
10
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SD
24+
SOT23SOT89
8866666
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SD
24+
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9800
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XX
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5000
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NA
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69900
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更多E50N50供應(yīng)商 更新時間2025-1-10 17:39:00