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FDP6670AL

N-Channel Logic Level PowerTrenchTM MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP6670AL

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP6670AS

30V N-Channel PowerTrench SyncFET

GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP6670ASincludesanintegratedSchottkyd

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP6670AS

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP6670AS_NL

30V N-Channel PowerTrench SyncFET

GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP6670ASincludesanintegratedSchottkyd

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP6670S

30V N-Channel PowerTrench SyncFET

GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP6670SincludesanintegratedSchottkydi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP6670S

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP6670AS

30V N-Channel PowerTrench? SyncFET?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP6670AS_08

30V N-Channel PowerTrench? SyncFET?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS6670

100VN-ChannelMOSFET

Features ShieldedGateMOSFETTechnology HBMESDprotectionlevel>6kVtypical(Note4) HighperformancetrenchtechnologyforextremelylowRDS(on) Highpowerandcurrenthandlingcapabilityinawidelyused surfacemountpackage VDS=100V ID(atVGS=10V)4.2A RDS(ON)(atVGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

詳細參數(shù)

  • 型號：

    FDP6670

  • 功能描述：

    MOSFET N-Ch PowerTrench Logic Level

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD
23+
TO-220
65400
詢價
onsemi(安森美)
23+
TO-220
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FAI
24+
TO-220
1
詢價
仙童
06+
TO-220
5000
原裝
 詢價
FAIRCHILD
23+
TO-220
9526
詢價
FAIRCHID
23+
TO-220
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
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FAIRCHILD
24+
TO-220
3000
全新原裝環(huán)?，F(xiàn)貨
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FAIRCHILD
24+
TO-220
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FAIRCHILD
2020+
TO-220
6500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
更多FDP6670供應(yīng)商 更新時間2025-1-25 14:10:00

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