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FDP7N60NZ

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=6.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP7N60NZ

N-Channel UniFETTM II MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDPF7N60NZ

N-ChannelMOSFET600V,6.5A,1.25?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDPF7N60NZ

N-ChannelUniFETTMIIMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDPF7N60NZ

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDU7N60NZTU

N-ChannelUniFETTMIIMOSFET600V,5.5A,1.25廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB7N60UNDF

600V,7AShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP7N60RUFD

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP7N60RUFD

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP7N60RUFDTU

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號:

    FDP7N60NZ

  • 功能描述:

    MOSFET 600V N-Chan MOSFET UniFET-II

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
onsemi
24+
TO-220-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
仙童Fairchild/FSC
2020+
TO220
9500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
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FAIRCHILD/仙童
24+
TO-220-3
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢價(jià)
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FAIRCHILDONSEMICONDUCTOR
21+
NA
3000
只做原裝,假一罰十
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onsemi(安森美)
23+
TO-220
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
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ONSemiconductor
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
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FSC進(jìn)口原
22+23+
TO-220
23421
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
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FAIRCHI
1844+
TO220
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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FAIRCHI
21+
TO-220
12588
原裝正品,自己庫存 假一罰十
詢價(jià)
三年內(nèi)
1983
只做原裝正品
詢價(jià)
更多FDP7N60NZ供應(yīng)商 更新時(shí)間2025-1-24 14:14:00