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FDZ299P

P-Channel 2.5 V Specified PowerTrench BGA MOSFET

GeneralDescription CombiningFairchild’sadvanced2.5VspecifiedPowerTrenchprocesswithstateoftheartBGApackaging,theFDZ299PminimizesbothPCBspaceandRDS(ON).ThisBGAMOSFETembodiesabreakthroughinpackagingtechnologywhichenablesthedevicetocombineexcellentthermaltransf

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS299K

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS299K

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299K

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299KMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299KMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299KMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS299MS

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS299MS

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299MS

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HP299

Introduction

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詳細(xì)參數(shù)

  • 型號(hào):

    FDZ299P

  • 功能描述:

    MOSFET 20V/12V PCh MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
onsemi(安森美)
23+
BGA-9(2x2
9908
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價(jià)
FAIRCHILD/FSC/仙童飛兆半
24+
BGA-8
12200
新進(jìn)庫存/原裝
詢價(jià)
FAIRCHILD
2016+
SSOP-6
3500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
FAIRCHILD
23+
BGA
12000
全新原裝優(yōu)勢(shì)
詢價(jià)
原廠
23+
BGA
5000
原裝正品,假一罰十
詢價(jià)
FAI
24+
BGA-6
200
原裝進(jìn)口現(xiàn)貨/只做原裝
詢價(jià)
FAIRCHILD
BGA
10265
提供BOM表配單只做原裝貨值得信賴
詢價(jià)
FAIRCHIL
2020+
BGA-8
985000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
FSC
22+
BGA6
1000
進(jìn)口原裝!現(xiàn)貨庫存
詢價(jià)
更多FDZ299P供應(yīng)商 更新時(shí)間2025-1-6 14:40:00