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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
FSGYE230R	文件：81.82 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFET IntersilStarPowerRadHard MOSFETshavebeenspecifically developedforhighperformance applicationsinacommercialor militaryspaceenvironment. StarPowerMOSFETsofferthesystemdesignerboth extremelylowrDS(ON)andGateChargeallowingthe developmentoflowlossPowerSubsystem	Intersil Intersil Corporation	Intersil
FSGYE230R3	文件：81.82 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFET IntersilStarPowerRadHard MOSFETshavebeenspecifically developedforhighperformance applicationsinacommercialor militaryspaceenvironment. StarPowerMOSFETsofferthesystemdesignerboth extremelylowrDS(ON)andGateChargeallowingthe developmentoflowlossPowerSubsystem	Intersil Intersil Corporation	Intersil
FSGYE230R4	文件：81.82 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFET IntersilStarPowerRadHard MOSFETshavebeenspecifically developedforhighperformance applicationsinacommercialor militaryspaceenvironment. StarPowerMOSFETsofferthesystemdesignerboth extremelylowrDS(ON)andGateChargeallowingthe developmentoflowlossPowerSubsystem	Intersil Intersil Corporation	Intersil
FSL230	文件：45.65 Kbytes Page：8 Pages	5A,200V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL230D	文件：45.65 Kbytes Page：8 Pages	5A,200V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL230R	文件：45.65 Kbytes Page：8 Pages	5A,200V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSLF230-SUS	文件：741.79 Kbytes Page：2 Pages	On/Off,SpringReturn,350?F[177?C]forhalfanhour,15sCycleTime	BELIMO BELIMO AIRCONTROLS (USA), INC	BELIMO
FSLF230US	文件：597.3 Kbytes Page：2 Pages	On/Off,SpringReturn,350?F[177?C]forhalfanhour,15sCycleTime	BELIMO BELIMO AIRCONTROLS (USA), INC	BELIMO
FSNF230-SUS	文件：613.06 Kbytes Page：2 Pages	On/Off,SpringReturn,350?F[177?C]forhalfanhour,AC230V,15sCycleTime	BELIMO BELIMO AIRCONTROLS (USA), INC	BELIMO
FSNF230US	文件：483.82 Kbytes Page：2 Pages	On/Off,SpringReturn,350?F[177?C]forhalfanhour,AC230V,15sCycleTime	BELIMO BELIMO AIRCONTROLS (USA), INC	BELIMO
FSPL230F	文件：81.57 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	Intersil Intersil Corporation	Intersil
FSPL230R	文件：81.57 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	Intersil Intersil Corporation	Intersil
FSPS230F	文件：80.35 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPower?RadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Sta	Intersil Intersil Corporation	Intersil
FSPS230R	文件：80.35 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPower?RadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Sta	Intersil Intersil Corporation	Intersil
FSPYE230	文件：83.75 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	Intersil Intersil Corporation	Intersil
FSPYE230F	文件：83.75 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	Intersil Intersil Corporation	Intersil
FSPYE230R	文件：83.75 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	Intersil Intersil Corporation	Intersil
FSS230D	文件：46.46 Kbytes Page：8 Pages	8A,200V,0.440Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSS230R	文件：46.46 Kbytes Page：8 Pages	8A,200V,0.440Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSTF230-SUS	文件：714.14 Kbytes Page：2 Pages	On/Off,SpringReturn,AC230V,AuxiliarySwitch	BELIMO BELIMO AIRCONTROLS (USA), INC	BELIMO

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詳細(xì)參數(shù)

型號(hào)：
FSGYE230R
制造商：
INTERSIL
制造商全稱：
Intersil Corporation
功能描述：
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	FSH04A03L	NIEC	17+	TO-220F	6200		詢價(jià)
深圳市一線半導(dǎo)體有限公司	FSH04A03L	NIEC	24+	TO-220F-2pin	8866		詢價(jià)
艾睿國(guó)際（香港）有限公司	FSH04A03L	NIEC	2021+	TO-220F	100500	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	FSH04A03L	NEC	23+	TO-220F	10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市富芯樂電子科技有限公司	FSH04A03L	NIEC	22+	TO-220F	25000	絕對(duì)全新原裝現(xiàn)貨	詢價(jià)
深圳市旺財(cái)半導(dǎo)體有限公司	FSH04A03L	NIEC	23+	TO-220	2800	正品原裝貨價(jià)格低qq:2987726803	詢價(jià)
深圳市星佑電子有限公司	FSH04A10	RECTRON	05+	原廠原裝	33716	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市卓越微芯電子有限公司	FSH04A10	新電源	2020+	TO220F-	9500	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市鼎欣微電子有限公司	FSH04A10	NIEC	21+	TO220F	19000	只做正品原裝現(xiàn)貨	詢價(jià)
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	FSH04A10	NIEC	21+	TO220	82	原裝現(xiàn)貨假一賠十	詢價(jià)

更多FSGYE230R供應(yīng)商更新時(shí)間2025-1-7 16:00:00

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