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GE28F800C3BD70中文資料英特爾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GE28F800C3BD70
廠(chǎng)商型號(hào)

GE28F800C3BD70

功能描述

Advanced Boot Block Flash Memory (C3)

文件大小

1.12721 Mbytes

頁(yè)面數(shù)量

68 頁(yè)

生產(chǎn)廠(chǎng)商 Intel Corporation
企業(yè)簡(jiǎn)稱(chēng)

Intel英特爾

中文名稱(chēng)

英特爾官網(wǎng)

原廠(chǎng)標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠(chǎng)下載

更新時(shí)間

2025-1-25 23:00:00

GE28F800C3BD70規(guī)格書(shū)詳情

The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible block locking allows any block to be independently locked or unlocked. Add to this the Intel-developed Flash Data Integrator (FDI) software and you have a cost-effective, flexible, monolithic code plus data storage solution on the market today. 3 Volt Advanced+ Boot Block products will be available in 48-lead TSOP, 40-lead TSOP, and 48-ball μBGA* packages.

■ Flexible SmartVoltage Technology

- 2.7 V–3.6 V Read/Program/Erase

- 2.7 V or 1.65 V I/O Option Reduces Overall System Power

- 12 V for Fast Production Programming

■ High Performance

- 2.7 V–3.6 V: 90 ns Max Access Time

- 3.0 V–3.6 V: 80 ns Max Access Time

■ Optimized Architecture for Code Plus Data Storage

- Eight 8-Kbyte Blocks, Top or Bottom Locations

- Up to Sixty-Three 64-KB Blocks

- Fast Program Suspend Capability

- Fast Erase Suspend Capability

■ Flexible Block Locking

- Lock/Unlock Any Block

- Full Protection on Power-Up

- WP# Pin for Hardware Block Protection

- VPP = GND Option

- VCC Lockout Voltage

■ Low Power Consumption

- 9 mA Typical Read Power

- 10 μA Typical Standby Power with Automatic Power Savings Feature

■ Extended Temperature Operation

- –40 °C to +85 °C

■ Easy-12 V

- Faster Production Programming

- No Additional System Logic

■ 128-bit Protection Register

- 64-bit Unique Device Identifier

- 64-bit User Programmable OTP Cells

■ Extended Cycling Capability

- Minimum 100,000 Block Erase Cycles

■ Flash Data Integrator Software

- Flash Memory Manager

- System Interrupt Manager

- Supports Parameter Storage, Streaming Data (e.g., voice)

■ Automated Word/Byte Program and Block Erase

- Command User Interface

- Status Registers

■ SRAM-Compatible Write Interface

■ Cross-Compatible Command Support

- Intel Basic Command Set

- Common Flash Interface

■ x 16 for High Performance

- 48-Ball μBGA* Package

- 48-Lead TSOP Package

■ x 8 I/O for Space Savings

- 48-Ball μBGA* Package

- 40-Lead TSOP Package

■ 0.25 μ ETOX? VI Flash Technology

產(chǎn)品屬性

  • 型號(hào):

    GE28F800C3BD70

  • 制造商:

    INTEL

  • 制造商全稱(chēng):

    Intel Corporation

  • 功能描述:

    Advanced+ Boot Block Flash Memory(C3)

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
O2MRO
23+
NA/
5484
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OZMICRO
16+
SOP10
880000
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HARRIS
23+
NA
18524
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HARRIS
24+
DIP
30
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HARRIS
22+
DIP
5000
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GE
10
全新原裝 貨期兩周
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GEMOS
22+
SOT-89
9600
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NA
2021+
TO-3
100500
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GEMOS
22+
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25000
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23+
TO-252
10000
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