首頁(yè) >HCTS244DMSR>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
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HCTS244DMSR | Radiation Hardened Octal Buffer/Line Driver, Three-State Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/ | Intersil Intersil Corporation | Intersil | |
HCTS244DMSR | Radiation Hardened Octal Buffer/Line Driver, Three-State Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si)/s ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
RadiationHardenedOctalBuffer/LineDriver,Three-State Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/ | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si)/s ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/ | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si)/s ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/ | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si)/s ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/ | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si)/s ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof | Intersil Intersil Corporation | Intersil | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati | Hittite Hittite Microwave Corporation | Hittite | ||
ACTIVEBIASCONTROLLER GeneralDescription HMC981isanactivebiascontrollerthatautomaticallyadjuststhegatevoltageofanexternalamplifiertoachieveconstantbiascurrent.ItcanbeusedtobiasanyenhancementanddepletiontypeamplifiersoperatinginClass-AregimewithDrainvoltagesfrom4Vto12Vanddr | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
14Aand13A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
StaticDrain-SourceOn-Resistance | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
15Aand14A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil |
詳細(xì)參數(shù)
- 型號(hào):
HCTS244DMSR
- 制造商:
INTERSIL
- 制造商全稱:
Intersil Corporation
- 功能描述:
Radiation Hardened Octal Buffer/Line Driver, Three-State
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ISL |
23+ |
65480 |
詢價(jià) | ||||
H |
18 |
CDIP |
200 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
H |
23+ |
CDIP |
66800 |
原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源! |
詢價(jià) | ||
24+ |
長(zhǎng)期備有現(xiàn)貨 |
500000 |
行業(yè)低價(jià),代理渠道 |
詢價(jià) | |||
H |
21+ |
CDIP |
645 |
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方! |
詢價(jià) | ||
H |
QQ咨詢 |
CDIP |
82 |
全新原裝 研究所指定供貨商 |
詢價(jià) | ||
H |
2318+ |
CDIP |
4862 |
只做進(jìn)口原裝!假一賠百!自己庫(kù)存價(jià)優(yōu)! |
詢價(jià) | ||
ISL |
06+ |
原廠原裝 |
4287 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
INTERSIL |
14+ |
原廠封裝 |
19 |
宇航IC只做原裝假一罰十 |
詢價(jià) | ||
INTERSIL |
24+ |
N/A |
90000 |
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價(jià)格合理 |
詢價(jià) |
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