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HGTG30N60C3D分立半導體產品的晶體管-UGBT、MOSFET-單規(guī)格書PDF中文資料
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HGTG30N60C3D規(guī)格書詳情
Description
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25°C and +150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
Features
? 63A, 600V at TC= +25°C
? Typical Fall Time - 230ns at TJ= +150°C
? Short Circuit Rating
? Low Conduction Loss
? Hyperfast Anti-Parallel Diode
產品屬性
- 產品編號:
HGTG30N60C3D
- 制造商:
onsemi
- 類別:
分立半導體產品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- 不同?Vge、Ic 時?Vce(on)(最大值):
1.8V @ 15V,30A
- 開關能量:
1.05mJ(開),2.5mJ(關)
- 輸入類型:
標準
- 工作溫度:
-40°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-3
- 供應商器件封裝:
TO-247-3
- 描述:
IGBT 600V 63A TO247-3
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
64000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
ON |
23+ |
TO-247 |
3000 |
全新原裝正品!一手貨源價格優(yōu)勢! |
詢價 | ||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
FAIRCHILD |
23+ |
TO-247 |
9526 |
詢價 | |||
FAIRCHILD |
22+ |
NA |
3200 |
全新原裝品牌專營 |
詢價 | ||
ON/安森美 |
2022+ |
5000 |
只做原裝,價格優(yōu)惠,長期供貨。 |
詢價 | |||
Fairchild/ON |
23+ |
TO247 |
7000 |
詢價 | |||
ON/安森美 |
24+ |
SMD |
450 |
原裝現貨 |
詢價 | ||
FAIRC |
24+ |
TO-247 |
16800 |
絕對原裝進口現貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
Fairchild Semiconductor |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 |