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HM50P03K

P-Channel Enhancement Mode Power MOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

JMTK50P03A

JJWJieJie Microelectronics Co., Ltd.

捷捷微江蘇捷捷微電子股份有限公司

PDF上傳者:深圳市溢航科技有限公司

MT50P03

P-Channel30V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

MTB50P03HDL

PowerMOSFET50Amps,30Volts,LogicLevelP??hannelD2PAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB50P03HDL

TMOSPOWERFETLOGICLEVEL50AMPERES30VOLTS

HDTMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount P-channelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponen

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB50P03HDL

P-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB50P03HDLG

P-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB50P03HDLG

PowerMOSFET50Amps,30Volts,LogicLevelP??hannelD2PAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP50P03HDL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP50P03HDL

TMOSPOWERFETLOGICLEVEL50AMPERES30VOLTSRDS(on)=0.025OHM

HDTMOSE-FETPowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecover

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP50P03HDL

PowerMOSFET50Amps,30Volts,LogicLevelP-ChannelTO-220

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP50P03HDLG

PowerMOSFET50Amps,30Volts,LogicLevelP-ChannelTO-220

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NP50P03YDG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P03YDG

MOSFIELDEFFECTTRANSISTOR

Description TheNP50P03YDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=8.4mΩMAX.(VGS=?10V,ID=?25A) ?LowCiss:Ciss=2300pFTYP.(VDS=?25V,VGS=0V) ?Designedforautomotiveapp

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

SPD50P03L

OptiMOS-PPower-Transistor

Feature ?P-Channel ?Enhancementmode ?LogicLevel ?Highcurrentrating ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD50P03LG

OptiMOS-PPower-Transistor

Features ?P-Channel ?Enhancementmode ?Logiclevel ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?Highcurrentrating ?Pb-freelead-plating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD50P03LG

OptiMOS?-PPower-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD50P03LG

P-Channel30V(D-S)MOSFET

FEATURES ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

SPR50P03-C

P-ChannelEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SQD50P03

AutomotiveP-Channel30V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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HMSEMI
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HMSEMI
23+
TO-252
6800
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H
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更多HM50P03K供應(yīng)商 更新時(shí)間2025-1-9 14:30:00