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IRF121

8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF121

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDs

SamsungSamsung semiconductor

三星三星半導體

IRF121

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF121

NanosecondSwitchingSpeeds

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF121

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF121

N-ChannelPowerMosfets,

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF121

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF121

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRFD121

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

IRFF121

N-ChannelEnhancement-ModePowerMOSField-EffectTransistors

5.0Aand6.0A,60V-100VrDS(0n)=0.30Ωand0.40Ω Features: ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

詳細參數(shù)

  • 型號：

    HPR121WC

  • 功能描述：

    DC/DC轉換器 .75W 24V +/-5V 75mA Dual Output

  • RoHS：

    否

  • 制造商：

    Murata

  • 輸入電壓范圍：

    3.6 V to 5.5 V

  • 輸出端數(shù)量：

    1 輸出電壓（通道

  • 1）：

    3.3 V 輸出電流（通道

  • 1）：

    600 mA 輸出電壓（通道

  • 2）：

    輸出電流（通道

  • 安裝風格：

    SMD/SMT

供應商型號品牌批號封裝庫存備注價格
BB
24+
A
31
詢價
CANDD
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
power
ROHS
13352
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
BB
23+
A
61964
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術
 詢價
MURATA/村田
18+
SMD
288000
原裝正品價格優(yōu)勢
 詢價
MURATA/村田
2021+
SIP
11000
十年專營原裝現(xiàn)貨,假一賠十
 詢價
MURATA/村田
23
SIP
55000
原廠渠道原裝正品假一賠十
 詢價
24+
N/A
64000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
MURATA/村田
23+
SIPDIP
56688
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
C&D
1844+
LQFP
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
更多HPR121WC供應商 更新時間2025-4-22 16:30:00

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