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HY18N50W

500V / 18A N-Channel Enhancement Mode MOSFET

HY

HY ELECTRONIC CORP.

IRFB18N50K

PowerMOSFET

1.LowGateChargeQgResultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdV/dtRuggedness 3.FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent 4.LowRDS(on) 5.Lead(Pb)-freeAvailable

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB18N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB18N50K

PowerMOSFET(Vdss=500V,Rds(on)max=0.26ohm,Id=27A)

Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching 4.HardSwitchedandHighFrequencyCircuits

IRF

International Rectifier

IRFB18N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB18N50K

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=17A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.29Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFB18N50KPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB18N50KPBF

PowerMOSFET

1.LowGateChargeQgResultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdV/dtRuggedness 3.FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent 4.LowRDS(on) 5.Lead(Pb)-freeAvailable

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB18N50KPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB18N50KPBF

SMPSMOSFET

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    HY18N50W

  • 制造商:

    HY

  • 制造商全稱(chēng):

    HY ELECTRONIC CORP.

  • 功能描述:

    500V/18A N-Channel Enhancement Mode MOSFET

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LEM
專(zhuān)業(yè)模塊
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8513
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LEM
24+
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2173
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23+
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7300
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LEM
23+
MODULE
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
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HY
2018
SMD
131393
HY HY18P10P SMD 2018
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華裔
21+
TO-220FB-3L
7540
只做原裝正品假一賠十!正規(guī)渠道訂貨!
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INFIEON
24+
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6980
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INFIEON
23+
BGA
20000
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INFIEON
20+
BGA
11520
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INFIEON
2023+
BGA
80000
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更多HY18N50W供應(yīng)商 更新時(shí)間2025-1-25 14:14:00