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IDTCV123PVG

PROGRAMMABLE FLEXPC? CLOCK FOR P4 PROCESSOR

FEATURES: ?OnehighprecisionPLLforCPU,withSSCandNprogrammable ?OnehighprecisionPLLforSRC/PCI/SATA,SSCandNprogrammable ?OnehighprecisionPLLfor96MHz/48MHz ?Band-gapcircuitfordifferentialoutputs ?Supportsspreadspectrummodulation,downspread0.5 ?SupportsSMB

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDTCV123PVG

包裝：托盤 封裝/外殼：56-BSSOP（0.295"，7.50mm 寬） 類別：集成電路（IC） 應(yīng)用特定時鐘/定時 描述：IC FLEXPC CLK PROGR P4 56-SSOP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDTCV123PVG8

包裝：托盤 封裝/外殼：56-BSSOP（0.295"，7.50mm 寬） 類別：集成電路（IC） 應(yīng)用特定時鐘/定時 描述：IC FLEXPC CLK PROGR P4 56-SSOP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IP123

3AMPPOSITIVEVOLTAGEREGULATORS

FEATURES ?0.04/VLINEREGULATION ?0.3/ALOADREGULATION ?THERMALOVERLOADPROTECTION ?SHORTCIRCUITPROTECTION ?SAFEOPERATINGAREAPROTECTION ?1TOLERANCE ?START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT ?AVAILABLEIN5V,12VAND15VOPTIONS

SEME-LAB

Seme LAB

IP123A

3AMPPOSITIVEVOLTAGEREGULATORS

FEATURES ?0.04/VLINEREGULATION ?0.3/ALOADREGULATION ?THERMALOVERLOADPROTECTION ?SHORTCIRCUITPROTECTION ?SAFEOPERATINGAREAPROTECTION ?1TOLERANCE ?START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT ?AVAILABLEIN5V,12VAND15VOPTIONS

SEME-LAB

Seme LAB

IPM-C123

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊

IPM-L123

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF123

8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF123

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDs

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF123

NanosecondSwitchingSpeeds

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF123

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMosfets,

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFD123

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

IRFD123

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD123

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD123PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD123PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IDTCV123PVG

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 應(yīng)用特定時鐘/定時

  • 系列：

    FlexPC?

  • 包裝：

    托盤

  • PLL：

    是

  • 主要用途：

    SATA CPU

  • 輸入：

    晶體

  • 輸出：

    時鐘

  • 比率 - 輸入：

    1：22

  • 差分 - 輸入：

    無/是

  • 頻率 - 最大值：

    400MHz

  • 電壓 - 供電：

    3.135V ~ 3.465V

  • 工作溫度：

    0°C ~ 70°C

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    56-BSSOP（0.295"，7.50mm 寬）

  • 供應(yīng)商器件封裝：

    56-SSOP

  • 描述：

    IC FLEXPC CLK PROGR P4 56-SSOP

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
23+
SSOP-PBF
3600
絕對全新原裝!現(xiàn)貨!特價!請放心訂購!
 詢價
IDT
24+
SSOP-PBF
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
IDT, Integrated Device Technol
24+
56-SSOP
53200
一級代理/放心采購
 詢價
IDT
20+
SSOP-56
1001
就找我吧!--邀您體驗愉快問購元件!
 詢價
IDT
22+
56SSOP
9000
原廠渠道,現(xiàn)貨配單
 詢價
IDT
21+
56SSOP
13880
公司只售原裝,支持實單
 詢價
IDT
23+
56SSOP
9000
原裝正品，支持實單
 詢價
Renesas Electronics America In
24+
56-BSSOP(0.295 7.50mm 寬)
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
IDT
24+
SSOP-56
9843
優(yōu)勢現(xiàn)貨
 詢價
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
更多IDTCV123PVG供應(yīng)商 更新時間2025-1-6 16:31:00

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