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HN1B01F

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

HN1B01F

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

HN1B01F

Audio-FrequencyGeneral-PurposeAmplifierApplications

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

HN1B01F

NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

HN1B01F

SiliconNPNEpitaxialType(PCTProcess)Audio-FrequencyGeneral-PurposeAmplifierApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

HN1B01FU

SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyGeneralPurposeAmplifierApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

HN1B01FU

NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

HN1B01FU-GR

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

HN1B01FU-Y

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

HN1B01F-Y

Audio-FrequencyGeneral-PurposeAmplifierApplications

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

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ALCATEL
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QFP
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INFIN
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2020+
BULKSO
908
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