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首頁 >IPI65R380C6>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IPI65R380C6	文件：2.15249 Mbytes Page：19 Pages	650V CoolMOS C6 Power Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R380C6	文件：1.95871 Mbytes Page：19 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R380C6	文件：331.25 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IIPD65R380C6	文件：336.52 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?Veryhighcommutationruggedness ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IIPP65R380C6	文件：338.77 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IPA65R380C6	文件：1.95871 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPA65R380C6	文件：316.78 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?PFCstages,hardswitchingPWMstagesandresonants	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IPA65R380C6	文件：2.15249 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R380C6	文件：2.15249 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R380C6	文件：1.95871 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R380C6	文件：189.79 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IPD65R380C6	文件：336.52 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?Veryhighcommutationruggedness ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IPD65R380C6	文件：1.95871 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPD65R380C6	文件：2.15249 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R380C6	文件：338.77 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IPP65R380C6	文件：1.95871 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R380C6	文件：2.15249 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon

詳細參數(shù)

型號：
IPI65R380C6
功能描述：
MOSFET N-CH 650V 10.6A TO262
RoHS：
是
類別：
分離式半導體產(chǎn)品 >> FET - 單
系列：
CoolMOS™
標準包裝：
1,000
系列：
MESH OVERLAY™ FET
型：
MOSFET N 通道，金屬氧化物 FET
特點：
邏輯電平門
漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
C：
180 毫歐 @ 9A，10V Id 時的
Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
Vgs：
72nC @ 10V 輸入電容(Ciss) @
Vds：
1560pF @ 25V 功率 -
最大：
40W
安裝類型：
通孔
封裝/外殼：
TO-220-3 整包
供應商設備封裝：
TO-220FP
包裝：
管件

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市英科美電子有限公司	IPI65R380C6	INFINEON/英飛凌	2021+	TO-262	17221	原裝進口假一罰十	詢價
深圳市創(chuàng)盛芯科技有限公司	IPI65R380C6	INFINEON/英飛凌	24+	TO-262	14600	全新原裝現(xiàn)貨	詢價
深圳市高捷芯城科技有限公司	IPI65R380C6	Infineon(英飛凌)	23+	TO-262	8145	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價
深圳市中福國際管理有限公司	IPI65R380C6	INFINEON/英飛凌	23+	PG-TO262-3	360000	專業(yè)供應MOS/LDO/晶體管/有大量價格低	詢價
深圳市達恩科技有限公司	IPI65R380C6	Infineon	18+	NA	3000	進口原裝正品優(yōu)勢供應	詢價
IPI65R380C6	英飛凌	21+	PG-TO262-3	6000	絕對原裝現(xiàn)貨	詢價
艾睿國際（香港）有限公司	IPI65R380C6	Infineon(英飛凌)	2117+	PG-TO262-3	315000	一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨	詢價
深圳市杰順創(chuàng)科技有限公司	IPI65R380C6	Infineon/英飛凌	21+	PG-TO262-3	6000	原裝現(xiàn)貨正品	詢價
深圳市珩瑞科技有限公司	IPI65R380C6	Infineon/英飛凌	21+	PG-TO262-3	10000	原裝,品質(zhì)保證,請來電咨詢	詢價
深圳市國宇半導體科技有限公司	IPI65R380C6	INFINEON/英飛凌	23+	TO262	10000	公司只做原裝正品	詢價

更多IPI65R380C6供應商更新時間2025-1-15 17:48:00

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