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IIPD65R600C6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIPP65R600C6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPA65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA65R600C6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB65R600C6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R600C6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPD65R600C6

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI65R600C6

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號:

    IPI65R600C6ZZ

  • 制造商:

    Infineon Technologies AG

  • 功能描述:

    COOL MOS

供應商型號品牌批號封裝庫存備注價格
INFINEON
23+
8000
專注配單,只做原裝進口現(xiàn)貨
詢價
INFINEON
23+
8000
專注配單,只做原裝進口現(xiàn)貨
詢價
INFINEON
23+
7000
詢價
INFINEON/英飛凌
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
INFINE0N
23+
TO-262-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
INFINEON/英飛凌
23+
TO262
10000
公司只做原裝正品
詢價
INFINEON/英飛凌
22+
TO262
92902
詢價
Infineon
1931+
N/A
493
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
INFINEON
1809+
TO262-3
3675
就找我吧!--邀您體驗愉快問購元件!
詢價
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細信息,
詢價
更多IPI65R600C6ZZ供應商 更新時間2025-1-28 15:00:00