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IRF1018EPBF

HEXFET Power MOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRF1018EPBF

High Efficiency Synchronous Rectification in SMPS

IRF

International Rectifier

IRF1018EPBF_15

High Efficiency Synchronous Rectification in SMPS

IRF

International Rectifier

IRF1018ES

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1018ESLPBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRF1018ESLPBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRF1018ESPBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRF1018ESPBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFR1018E

N-ChannelMOSFETTransistor

?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤8.4m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR1018EPBF

HEXFETTMPowerMOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRF1018EPBF

  • 功能描述：

    MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
23+
TO-220
20540
保證進(jìn)口原裝現(xiàn)貨假一賠十
 詢價(jià)
IR
2020+
TO-220
9600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
Infineon Technologies
24+
TO-220AB
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IR
23+
TO-220
65400
詢價(jià)
INFINEON/英飛凌
24+
TO-220
1168
只做原廠渠道 可追溯貨源
 詢價(jià)
INFINEON
2020+
TO-220
1478
原裝庫存有訂單來談優(yōu)勢
 詢價(jià)
Infineon
23+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
IR
17+
TO-220AB
31518
原裝正品 可含稅交易
 詢價(jià)
INFINEON/英飛凌
2021+
TO-220
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
 詢價(jià)
INFINEON/英飛凌
22+
TO-220
4800
專營INFINEON/英飛凌全新原裝進(jìn)口正品
 詢價(jià)
更多IRF1018EPBF供應(yīng)商 更新時(shí)間2025-1-22 20:11:00

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