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IRF1405ZLPBF

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1405ZS

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF1405ZSPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRFBA1405

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRF

International Rectifier

IRFBA1405P

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRF

International Rectifier

IRFBA1405PPBF

HEXFET?PowerMOSFET

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fastswitchingspeedandimprovedruggednessinsingleand

IRF

International Rectifier

IRFBA1405PPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFP1405

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRFP1405

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP1405PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRFP1405PBF

AdvancedProcessTechnology

IRF

International Rectifier

JUAT1405MPD

RadialLeadType,LowerResistance

nichiconNichicon corporation

尼吉康日本尼吉康株式會(huì)社

JUAT1405MPD

RadialLeadType,LowerResistance

nichiconNichicon corporation

尼吉康日本尼吉康株式會(huì)社

KS1405N

7mmAdjustableshieldedIFTCoil(II)

FRONTIER

Frontier Electronics

KS1405N

7mmADJUSTABLEIFTCOILS(II)(SHIELDED)

FRONTIER

Frontier Electronics

KS1405N-LFR

7mmAdjustableshieldedIFTCoil(II)

FRONTIER

Frontier Electronics

KSV1405

SILICONHYPERABRUPTTUNINGDIODES

TheKSV1400Seriesofhyperabruptvaractorsofferhighcapacitanceratioswithlineartuningbetween2and8volts. Theunitsareavailableoverabroadrangeofjunctioncapacitances,satisfyingalargenumberofbroadbandapplicationsthrutheVHFfrequencyband.

KNOX

Knox Semiconductor, Inc

詳細(xì)參數(shù)

  • 型號(hào):

    IRF1405ZLPBF

  • 功能描述:

    MOSFET MOSFT 55V 150A 4.9mOhm 120nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon(英飛凌)
23+
TO-262
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
詢價(jià)
IR
2016+
TO-262
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
詢價(jià)
IR
24+
TO-262-3
4111
詢價(jià)
IR
23+
TO-262
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
IR
24+
TO-262
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR
23+
TO-262-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
IR
22+23+
TO-262
14732
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
IR
2020+
TO-262
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
詢價(jià)
International Rectifier
2022+
1
全新原裝 貨期兩周
詢價(jià)
更多IRF1405ZLPBF供應(yīng)商 更新時(shí)間2025-1-7 16:12:00