首頁 >IRF5305STRR>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Advanced Process Technology | IRF International Rectifier | IRF | ||
P??HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?PowerMOSFETsarewellknownfor,provid | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.065ohm,Id=-31A) | IRF International Rectifier | IRF | ||
-60VP-ChannelEnhancementModeMOSFET GENERALFEATURESVDS=-60V,ID=-30A RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司 | UMW | ||
-60VP-ChannelEnhancementModeMOSFET DESCRIPTION Theusesadvancedtrench technologytoprovideexcellentRDS(ON)andlowgatecharge.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GENERALFEATURES VDS=-60V,ID=-30A RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體 | EVVOSEMI | ||
HEXFET?PowerMOSFET(VDSS=-55V,RDS(on)=0.065廓,ID=-31A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?PowerMOSFETsarewellknownfor,provid | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
UltraLowOn-Resistance | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?PowerMOSFETsarewellknownfor,provid | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
UltraLowOn-Resistance | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance | IRF International Rectifier | IRF | ||
-60VP-ChannelEnhancementModeMOSFET GENERALFEATURESVDS=-60V,ID=-30A RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司 | UMW | ||
-60VP-ChannelEnhancementModeMOSFET DESCRIPTION Theusesadvancedtrench technologytoprovideexcellentRDS(ON)andlowgatecharge.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GENERALFEATURES VDS=-60V,ID=-30A RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體 | EVVOSEMI | ||
UltraLowOn-Resistance | IRF International Rectifier | IRF | ||
P-channelEnhancementModePowerMOSFET Features ?VDS=-60V,ID=-50A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
UltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.065ohm,Id=-31A) | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號:
IRF5305STRR
- 功能描述:
MOSFET 30V 1 N-CH 60mOhm HEXFET -31A ID
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
D2PAK |
8357 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
2020+ |
TO-263 |
1556 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
2020+ |
SOT-263 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
Infineon Technologies |
21+ |
D2PAK |
800 |
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)! |
詢價 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
IR |
22+ |
SOT-263 |
20000 |
保證原裝正品,假一陪十 |
詢價 | ||
Infineon(英飛凌) |
2112+ |
D2PAK |
115000 |
800個/卷一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 |
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