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IRF640NLPBF

HEXFET? Power MOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NLPBF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NLPBF

Advanced Process Technology

IRF

International Rectifier

IRF640NLPBF

Advanced Process Technology

IRF

International Rectifier

IRF640NPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NPBF

AdvancedProcessTechnologyDynamicdv/dtRating175OperatingTemperature

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NS

N-ChannelPowerMOSFETs200V,18A,0.15ohm

Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF640NS

HEXFETPowerMOSFET

IRF

International Rectifier

詳細參數

  • 型號：

    IRF640NLPBF

  • 功能描述：

    MOSFET MOSFT 200V 18A 150mOhm 44.7nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-262
500
只做原廠渠道 可追溯貨源
 詢價
Infineon(英飛凌)
24+
TO-262
7828
支持大陸交貨,美金交易。原裝現貨庫存。
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現貨價秒殺全網
 詢價
IR
24+
TO-262-3
271
詢價
IR
23+
TO-262
7750
全新原裝優(yōu)勢
 詢價
IR
23+
TO-262
20000
原裝正品,假一罰十
 詢價
Infineon
24+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-262-3
11846
一級代理商現貨批發(fā),原裝正品,假一罰十
 詢價
IOR
1815+
TO-220
6528
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
更多IRF640NLPBF供應商 更新時間2025-4-17 11:04:00

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